تاثیر ضخامت بر ویژگی های ساختاری، اپتیکی و الکتریکی لایه های نازک اکسیدروی آلایش یافته دوگانه (ZnO: Cu, Al)

نوع مقاله : مقاله پژوهشی

نویسندگان

گروه فیزیک، واحد تهران غرب، دانشگاه آزاد اسلامی تهران، ایران.

چکیده

لایه های نازک اکسیدروی (ZnO) آلایش یافته با آلومنیوم و مس (CAZO) توسط کندوپاش مغناطیسی جریان مستقیم (DC) تهیه شد. ویژگی‌های ساختاری، اپتیکی و الکتریکی لایه های نازک آلایش یافته دوگانه با استفاده از روش های مشخصه یابی پراش اشعه ایکس(XRD) ، میکروسکوپ نیروی اتمی (AFM)، طیف سنج نوری (Spectrophotometer) و پراکندگی بازگشتی رادرفورد (RMS) مورد بررسی قرار گرفتند. لایه های نازک با ضخامت های مختلف ساختاری آمورف داشتند. نمودار توزیع ذرات نشان داد که با افزایش ضخامت، اندازه نانوذرات از 10 نانومتر به 25 نانومتر رسیده و بازه تغییرات اندازه ذرات نیز افزایش یافته است.انرژی باندگپ با افزایش ضخامت کاهش یافته اما انرژی اوربچ افزایش یافته است. لایه CAZO با ضخامت 50 نانومتر انرژی فعالسازی کمتر و غلظت حامل های دهنده بیشتری داشتند اما با افزایش ضخامت، غلظت این نوع حامل ها (نوع n) کاهش می یابد، زیرا رسانش در لایه ها کمتر شده و مقاومت در لایه های CAZO با ضخامت 150 نانومتر افزایش یافته است.

کلیدواژه‌ها

موضوعات


عنوان مقاله [English]

Effect of Thickness on Structural, Optical and Electrical Properties of Co-Doped ZnO Thin Films (ZnO: Cu, Al)

نویسندگان [English]

  • Laya Dejam
  • Amir Hoshang Ramezani
Department of physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
چکیده [English]

Co-doped ZnO thin films (CAZO) were prepared by DC magnetron sputtering. The structural, electrical and optical properties of thin films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), optical spectrophotometer and Raderford Back Scattering (RBS) techniques. The CAZO thin films with different thicknesses had an amorphous structure. The particle distribution diagram showed that with the increase in thickness, the size of nanoparticles reached from 10 nm to 25 nm and the range of particle size changes also increased. The bandgap energy decreased with the increase in thickness, but the Urbach energy increased. The CAZO thin film with a thickness of 50 nm had lower activation energy and a higher concentration of donor carriers, but with increasing thickness, the concentration of this type of carriers (n-type) decreases, because the conduction in the layers decreases and the resistance in CAZO thin films with a thickness of 150 nm has increased.

کلیدواژه‌ها [English]

  • Co- doped zinc oxide
  • Bandgap energy
  • Urbach energy
  • Electrical resistance
  • Activation energy
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