بررسی عملکرد لایه دوتایی WN/W با ساختار نامنظم بعنوان لایه مانع نفوذ Cu در Si

نوع مقاله : علمی و پژوهشی

نویسندگان

• سمیه عسگری
• امیر هوشنگ زمضانی

دانشکده فیزیک، دانشگاه آزاد اسلامی، واحد تهران غرب، تهران، ایران

10.22067/jmme.2024.79637.1085

چکیده

لایه تنگستن/ نیترید تنگستن با ساختار نامنظم به روش تبخیرگرمایی روی زیرلایه اکسید سیلیکون/ سیلیکون انباشت شد. بررسی پایداری گرمایی این لایه دوتایی در دماهای مختلف از طریق پراش اشعه ایکس، میکروسکوپ الکترونی روبشی و پراب چهار نقطه‌ای انجام شد. بر اساس نتایج پراش اشعه ایکس، تشکیل فاز سیلیسید مس در دمای 800 درجه سانتیگراد، نشان دهنده نفوذ مس از درون لایه تنگستن/ نیترید تنگستن است. تشکیل فاز عایق سیلیسید مس، افزایش ناگهانی مقاومت الکتریکی (212 اهم / سانتیمترمربع) را در پی داشت که نشان دهنده مختل شدن کارایی لایه مانع نفوذ تنگستن/ نیترید تنگستن می باشد. نفوذ مس در سیلیکون، اغلب از طریق مرزدانه های ناخواسته ای است که در مراحل گرمادهی لایه تنگستن/ نیترید تنگستن با تغییر ساختار لایه مانع نفوذ از فاز نامنظم به بس بلوری رخ داده است و در نتایج پراش اشعه ایکس به خوبی نشان داده شده است. در دماهای بالا، تصویر میکروسکوپ الکترونی، شکستگی، ترک و پوسته شدن سطح لایه مس را نشان داده است که به دلیل ایجاد استرس گرمایی در بین سطوح مانع نفوذ/ مس و یا حجم لایه ها بوجود می آید.

کلیدواژه‌ها

• لایه مانع نفوذ
• نفوذ از طریق مرزدانه
• سیلیسید مس
• W/WN

موضوعات

• نانو مواد

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عنوان مقاله [English]

Investigating the Performance of Amorphous W / WN Bilayer as a Cu Diffusion Barrier in Si

نویسندگان [English]

• somayeh Asgary
• amir hoshang ramezani

Department of Physics, Islamic Azad University, West Tehran Branch, Tehran, Iran.

چکیده [English]

Tungsten/tungsten nitride bilayer with amorphous structure was deposited on the silicon / silicon oxide substrate by high vacuum thermal evaporation method. To investigate the thermal stability of this bilayer as a diffusion barrier layer, the Cu/W /WN/SiO2/Si multilayer was heated at different temperatures and the results were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-point probe (FPP) methods. According to the XRD results, formation of the cupper silicide at 800° C indicates diffusion of copper from the W/WN bilayer in the Si. The formation of a Cu3Si with insulation phase leads to a sudden increase in electrical resistance (212 Ω /cm2) and will disrupt the performance of the W/WN barrier layer as a diffusion barrier. The diffusion of copper into silicon is often through undesirable grain boundaries that occur during the heating treatment of the W/ WN bilayer by changing its phase from amorphous to polycrystalline and shown in X-ray diffraction results. At high temperatures, the electron microscope image has shown fracture, cracking and flaking of the surface of the copper layer, which is caused by thermal stress between the penetration barrier/copper surfaces or the volume of the layers.

کلیدواژه‌ها [English]

• Diffusion barrier layer
• Grain boundary diffusion
• Cu3Si
• WN/W

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