بررسی خواص دی الکتریکی لایه‌های نانوساختار Bi4Ti3O12 و Bi12TiO20 تهیه شده به روش سل- ژل

نوع مقاله : علمی و پژوهشی

نویسنده

• عباس صادق زاده عطار

دانشگاه کاشان

10.22067/ma.v30i1.49564

چکیده

هدف از این تحقیق، سنتز و مشخصه یابی لایه‌های نانوساختار تیتانات بیسموت با دو ترکیب Bi4Ti3O12 و Bi12TiO20 به روش سل- ژل  می باشد. همچنین تغییرات خواص دی الکتریک نمونه‌های تهیه شده با دمای آنیل و فرکانس اعمالی مورد بررسی و ارزیابی قرار گرفت. در این راستا دو محلول سل مختلف با نسبت‌های مولار مشخص از مواد اولیه به روش سل- ژل تهیه و پس از لایه نشانی خشک و سپس در دماهای مختلف 300 تا 700 درجه سانتیگراد آنیل شدند. به منظور بررسی ساختار و خواص لایه‌های سنتز شده از دستگاه‌های آنالیز طیفسنج مادون قرمز، پراش اسعه ایکس، میکروسکوپ الکترونی روبشی، طیف سنجی پراش انرژی پرتو ایکس و LCRمتر استفاده شد. بررسی‌های فازی نمونه‌ها به وسیله پراش اسعه ایکس حاکی از تشکیل ترکیبات Bi4Ti3O12 با ساختار اورتورومبیک و Bi12TiO20 با ساختار مکعبی می‌باشند که در دمای600 درجه سانتیگراد به مدت یک ساعت به طور کامل کریستاله شده‌اند. نتایج آزمایشات خواص دی الکتریک نشان داد که با افزایش دمای آنیل، ثابت دی الکتریک و اتلاف دی الکتریک در هر دو نمونه افزایش یافتند. همچنین با افزایش فرکانس، ثابت دی‌الکتریک نمونه‌ها کاهش و تلفات دی الکتریک آن‌ها افزایش می‌یابد.

کلیدواژه‌ها

• تیتانات بیسموت
• لایه نانوساختار
• فرایند سل- ژل
• ریزساختار
• خواص دی الکتریک
• مشخصه‌یابی

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عنوان مقاله [English]

Dielectric Properties of Nanostructured Bi4Ti3O12 and Bi12TiO20 Films Prepared by Sol-Gel Method

نویسنده [English]

• Abbas Sadeghzadeh-Attar

University of Kashan

چکیده [English]

In this paper, bismuth titanate (Bi4Ti3O12, Bi12TiO20) nanostructured films were successfully fabricated via sol-gel method. The structure and dielectric properties of the prepared thin films as a function of annealing temperature and applied frequency were investigated. In this order, two different solutions with optimal ratio of raw materials were prepared. The solutions were deposited on the substrates by dip coating, and then heat treated at different temperatures ranging from 300 to 700 oC for 1 h. The prepared films were characterized by means of Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and LCR meter. It was found that the single phases were formed when Bi4Ti3O12 and Bi12TiO20 samples were annealed at 600 oC, therefore, optimal condition could be obtained at this temperature. Dielectric studies showed that the dielectric constant and loss factor were increased with increased annealing temperatures. Also, the values of dielectric constant were decreased and dielectric loss increased with increasing frequency.
 

کلیدواژه‌ها [English]

• Bismuth titanate
• Nanostructured films
• Sol-gel process
• Microstructure
• Dielectric properties
• characterization

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